BUK9E1R6-30E,127

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See Product Specifications

Mfr. #:

BUK9E1R6-30E,127

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 30V 120A I2PAK

Упаковка:

Tube

Datasheet:

BUK9E1R6-30E,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BUK9E1R6-30E,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	f55852362a6379a6e139b5f0e28daf22
Rds On (Max) @ Id, Vgs:	e4daa4006fabd60d3b4f75af2e20b31a
Vgs(th) (Max) @ Id:	335f69c535d38282d0c930df5ac1d478
Gate Charge (Qg) (Max) @ Vgs:	32363fbf4b71292073ff4993a96a12a4
Vgs (Max):	10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:	e508785968eaefcf892687a7d9267609
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ede0f3ab5ad3c15ff1b3b36b0ef2723c
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687