PHB11N06LT,118

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See Product Specifications

Mfr. #:

PHB11N06LT,118

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 55V 10.3A D2PAK

Упаковка:

Tape & Reel (TR)

Datasheet:

PHB11N06LT,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHB11N06LT,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	2f23d6284d881f9576110d827b42bb45
Current - Continuous Drain (Id) @ 25°C:	d01df1d10bffa2abac2b9cf11289bdc0
Drive Voltage (Max Rds On, Min Rds On):	f55852362a6379a6e139b5f0e28daf22
Rds On (Max) @ Id, Vgs:	3ca1f87b7bc125856d9eec8dfbe03a6b
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	dd30ad2961960a3b323284d682d95066
Vgs (Max):	9884d8b7fc60ad43c98d6d70ea13a6eb
Input Capacitance (Ciss) (Max) @ Vds:	94d31ca15d35eb4b40de125a3ee374b1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4641ea625b22cc81f41391d00000365f
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956