PHB193NQ06T,118

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See Product Specifications

Mfr. #:

PHB193NQ06T,118

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 55V 75A D2PAK

Упаковка:

Tape & Reel (TR)

Datasheet:

PHB193NQ06T,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHB193NQ06T,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	2f23d6284d881f9576110d827b42bb45
Current - Continuous Drain (Id) @ 25°C:	2fc830bfd797ff874a4ada6c6cd6f876
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	8d3eb8584086207aa002b39f05e01de5
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	1008f1a9926e56b71bd13ccb7c2ebb60
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	26c7691c26357ad812afb74d13b545af
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ac1760e6638f8a136f249122761ef823
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956