PHD23NQ10T,118

PHD23NQ10T,118

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PHD23NQ10T,118
Mfr.:
Описание:
MOSFET N-CH 100V 23A DPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
PHD23NQ10T,118 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PHD23NQ10T,118
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:NXP USA Inc.
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:40eebc54315550f4a52f3ccff29ffa65
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:acba97c88934d99295a6b96e129e2045
Vgs(th) (Max) @ Id:e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:730e0e196e702729583c9674383eddc3
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:f110897ce460932377343155cd911d75
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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