PHD63NQ03LT,118

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See Product Specifications

Mfr. #:

PHD63NQ03LT,118

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 30V 68.9A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

PHD63NQ03LT,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PHD63NQ03LT,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	0d13e5de5ecd336f1c959e5016bb9549
Drive Voltage (Max Rds On, Min Rds On):	f55852362a6379a6e139b5f0e28daf22
Rds On (Max) @ Id, Vgs:	062304802b568d510a22f2e6ef169c5c
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	d46e07605638d1dc946582780d37cea1
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	54dc9204ed85602586cc9f7f39323946
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4f7578e277c5595e07960eb4296e9a58
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95