PMK30EP518

Images are for reference only
See Product Specifications

Mfr. #:

PMK30EP518

Mfr.:

NXP USA Inc.

Описание:

P-CHANNEL POWER MOSFET

Упаковка:

Bulk

Datasheet:

PMK30EP518 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMK30EP518
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	ff3e1084300023bebe8bf9595dcfe51c
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	ce89778b3aa01f9425667bbb3c3dc05c
Vgs(th) (Max) @ Id:	66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:	9e541cbc895757398ae8d0144a8ced7d
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	bc94b2f0ed344d381c8a8527bf0476f7
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	13d013146bc84cc268270ef7b0d62851
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	d8659a3487f6717d87be76387435c9e6
Package / Case:	f80d2dd5409d1e9f8a546eb6d6a8728d