PMPB40SNA115

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See Product Specifications

Mfr. #:

PMPB40SNA115

Mfr.:

NXP USA Inc.

Описание:

POWER FIELD-EFFECT TRANSISTOR

Упаковка:

Bulk

Datasheet:

PMPB40SNA115 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PMPB40SNA115
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	e65766b35c499649205ae3165437f184
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	726496774fda52ccb53d1a7f75d059a7
Vgs(th) (Max) @ Id:	66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:	adefe80c4a89824fe268dd1bd0082a35
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c1d3bb6d8ba97fad6e5aa84b42502cb5
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	645451f2be11ef1cf228fcd21ef306ff
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	0e6996d2a3e0c3ec0269e22208d85582
Package / Case:	c6d18f5cddfd33aab8c271dd5756afd6