PSMN009-100W,127

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See Product Specifications

Mfr. #:

PSMN009-100W,127

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 100V 100A TO247-3

Упаковка:

Tube

Datasheet:

PSMN009-100W,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN009-100W,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	160d551f33bf989d8711f20714816d9f
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	c44bea3f5d4cc1e50dab7c6d0a074588
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9d1a3534486646e7856a8c0ead2a55a1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	ac1760e6638f8a136f249122761ef823
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	566bc0f44c33782e0104763798b071ab
Package / Case:	748a8539a6c3c7dbdb455218c72fac40