PSMN050-80BS,118

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See Product Specifications

Mfr. #:

PSMN050-80BS,118

Mfr.:

NXP USA Inc.

Описание:

POWER FIELD-EFFECT TRANSISTOR, 2

Упаковка:

Bulk

Datasheet:

PSMN050-80BS,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN050-80BS,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	1665d0f324392ab2468aa154d47dcb98
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	fd48e2c8e8163ca4a788c63f9e9d5dff
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	e8a30954980feb5704747c3b8f94ff10
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	ee6c448b5c63f8f185c8bc30e7175c2f
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	d3e611168ada116db514c44b07d5bd1d
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956