PSMN070-200P,127-NXP

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See Product Specifications

Mfr. #:

Mfr.:

NXP USA Inc.

Описание:

POWER FIELD-EFFECT TRANSISTOR, 3

Упаковка:

Bulk

Datasheet:

PSMN070-200P,127-NXP Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PSMN070-200P,127-NXP
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	822fa9074467f53dd633c6786e269596
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	b790b0bb758dd62d2f8e37202ee049dc
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	d022c62db6fda99fc3b9e49937214f0e
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	927e64f7d51a5b9afd734b43f2d422bf
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	9b3b590b14408ced9e56cc56696084a1
Package / Case:	46bb638de2ea693de650d7f1c3115468