FQB2N80TM

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See Product Specifications

Mfr. #:

FQB2N80TM

Mfr.:

onsemi

Описание:

MOSFET N-CH 800V 2.4A D2PAK

Упаковка:

Tape & Reel (TR)

Datasheet:

FQB2N80TM Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	FQB2N80TM
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	onsemi
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:	f5fe67847e317fe5f6c60c45d146238a
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	d53947685f050a94c9f1ac884748fb08
Vgs(th) (Max) @ Id:	aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:	b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	4f6150dabc11b319d0b79cb22dda9213
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e4a84779bb819d25fff1e577e6201a40
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bf4aa032e4c992412ea226c67524cac7
Package / Case:	99446f4470b43888d0c78d7d2cdfc956