FQD2N100TM

FQD2N100TM

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FQD2N100TM
Mfr.:
Описание:
MOSFET N-CH 1000V 1.6A DPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
FQD2N100TM Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:FQD2N100TM
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:onsemi
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:5e2db5c0a77aea0ddc30a462160926e3
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:c1f701c5c0be8d7539eaee15c9b796c1
Vgs(th) (Max) @ Id:aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:a3f2a473a46fabb2a0641561c4d0a10b
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:4dbd20080f8f8401666752b28fe9d5ee
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):172be7ed5aeb2f00f98ad454a1e1f00d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:7ada2e7f7b50fcad7566a70926a057cb
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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