SIR5710DP-T1-RE3

SIR5710DP-T1-RE3

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SIR5710DP-T1-RE3
Описание:
N-CHANNEL 150 V (D-S) MOSFET POW
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR5710DP-T1-RE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR5710DP-T1-RE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):f5857b5c2d0b94d156ab7cc94df182c6
Current - Continuous Drain (Id) @ 25°C:965394b05d33e53d9c0774c5153845b4
Drive Voltage (Max Rds On, Min Rds On):629920a74232f30d2b06ff2b54267c3b
Rds On (Max) @ Id, Vgs:e387a5e5575a02f7bb221b1aedcb5a24
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:b8a0640fe9525616e9f66bccd7456bd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:68ec49b1af649bd200a7d5b4da01367d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):70b043e0ca5adc24d64ecdf8e0d42393
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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N-CHANNEL 150 V (D-S) MOSFET POW