SIR826BDP-T1-RE3

SIR826BDP-T1-RE3

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SIR826BDP-T1-RE3
Описание:
MOSFET N-CH 80V 19.8A/80.8A PPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR826BDP-T1-RE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR826BDP-T1-RE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:1eea92724b4d49c8fda1e89e36877197
Drive Voltage (Max Rds On, Min Rds On):629920a74232f30d2b06ff2b54267c3b
Rds On (Max) @ Id, Vgs:d3e022b8b951751efcd77f3ff7e024b8
Vgs(th) (Max) @ Id:49290fad653d58ec891aaab4b2c0f7cc
Gate Charge (Qg) (Max) @ Vgs:30d42a4f57ee9fd79c5d90774c43a790
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:ce8bd4d7d96634864954d0d0747be578
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):6cee3b7a026887261e567a29f9f55d44
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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