SI5410DU-T1-GE3

SI5410DU-T1-GE3

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SI5410DU-T1-GE3
Описание:
MOSFET N-CH 40V 12A PPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SI5410DU-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI5410DU-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:c98954c6bcd184452c80864782c9ab71
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:73b6a9603d7f8ab2152af48f02b4106a
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:f1d4411c14a38876d735f24f8437b43a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:f40e49a9c4142320c56bf076e7c728af
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d7a84f33c72a5045f53ba95d5a98521b
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:0365436a540db54f84ac1a9e1f8e41ce
Package / Case:0365436a540db54f84ac1a9e1f8e41ce
In Stock: 0
Stock:
0 Can Ship Immediately
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