NGD18N45CLBT4G

NGD18N45CLBT4G

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See Product Specifications

NGD18N45CLBT4G
Mfr.:
Описание:
INSULATED GATE BIPOLAR TRANSISTO
Упаковка:
Bulk
Datasheet:
NGD18N45CLBT4G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NGD18N45CLBT4G
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:onsemi
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):53acc560d6ddad5708f13429566dcdb7
Current - Collector (Ic) (Max):bf05093b7e2caea35e7adc4dd87b6402
Current - Collector Pulsed (Icm):80048aebe005b9413929a11bba83f563
Vce(on) (Max) @ Vge, Ic:833e1ebd5604933a981837f8d0a501cc
Power - Max:92e7f90834277d0da34b7838c52a153e
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:35ba1271dff4019593d3034c929e1bbc
Gate Charge:336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:4d6a0098c0033f250070b7b40be5b796
Test Condition:23cb97575ac878d163c6f3c412a2b0d2
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
Supplier Device Package:75db0233f6644359a3c3825a93da850c
In Stock: 0
Stock:
0 Can Ship Immediately
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