NGTD21T65F2WP

NGTD21T65F2WP

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NGTD21T65F2WP
Mfr.:
Описание:
IGBT TRENCH FIELD STOP 650V DIE
Упаковка:
Bulk
Datasheet:
NGTD21T65F2WP Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NGTD21T65F2WP
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:onsemi
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:bc8112dacc055dbbe98cd7db53249587
Voltage - Collector Emitter Breakdown (Max):347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):336d5ebc5436534e61d16e63ddfca327
Current - Collector Pulsed (Icm):63d19bd379a172e83028b5a9b57fac7b
Vce(on) (Max) @ Vge, Ic:eee8c7fa84e56e46f356966c5cfb8429
Power - Max:336d5ebc5436534e61d16e63ddfca327
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:952f8d52fbca6da722e72d520acd6edd
Supplier Device Package:952f8d52fbca6da722e72d520acd6edd
In Stock: 0
Stock:
0 Can Ship Immediately
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