NTHS2101PT1G

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See Product Specifications

Mfr. #:

NTHS2101PT1G

Mfr.:

onsemi

Описание:

MOSFET P-CH 8V 5.4A CHIPFET

Упаковка:

Tape & Reel (TR)

Datasheet:

NTHS2101PT1G Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	NTHS2101PT1G
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	onsemi
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	7d3364268c2b8854793e00b793cae274
Current - Continuous Drain (Id) @ 25°C:	57bafffaeeac483899428f670d5a2a60
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	c05a4d29839c4f94e3bb962224d650df
Vgs(th) (Max) @ Id:	f710eedc1bf5fdb1a1e1a08d92eb0502
Gate Charge (Qg) (Max) @ Vgs:	f4e74098a8b6a3227c3e07422d942603
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	c54549e78b3f0351b4ffefbfafceebf5
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	be803bd4e0936fd755166f5b6f8436f1
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	892b3732b70d0ae60741ea884077c099
Package / Case:	329165b0aed20d92ef6c9391381735e0