PJA3435_R1_00001

PJA3435_R1_00001

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PJA3435_R1_00001
Описание:
30V P-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJA3435_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJA3435_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:9ce979c79815632ede8d0e774dace223
Drive Voltage (Max Rds On, Min Rds On):2a209c50c2dd1678cb3d568dbbce6592
Rds On (Max) @ Id, Vgs:963dc5af46f9c4d1ace3e046fdf6df2d
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:80aa3243bd1c7cc5d9e0917d51f8b629
Vgs (Max):10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:269bb712cff90041a0bf1decd4257ee0
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ae2350350ba6e5a69d2dc91b08eae7b5
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 2918
Stock:
2918 Can Ship Immediately
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