PJE8402_R1_00001

Images are for reference only
See Product Specifications

Mfr. #:

PJE8402_R1_00001

Mfr.:

Panjit International Inc.

Описание:

20V N-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJE8402_R1_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJE8402_R1_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	536c4c20cb2fb8e9f0855c4c82bfb110
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	aab58e8cc1be10f9d528d2ee3d68db43
Vgs(th) (Max) @ Id:	fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:	c49c1d01e798c0e513fa6d3aa4cef407
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	0399b34a044a87d6e7e5c610dc1e5fbd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	87200f2944eb489a61ca5ba65f1fbad1
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	a3aeb12e681ccde3b9a11bc7ce332447
Package / Case:	a3aeb12e681ccde3b9a11bc7ce332447