PJL9602_R2_00001

PJL9602_R2_00001

Images are for reference only
See Product Specifications

PJL9602_R2_00001
Описание:
30V COMPLEMENTARY ENHANCEMENT MO
Упаковка:
Tape & Reel (TR)
Datasheet:
PJL9602_R2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJL9602_R2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:ea3650709c99cb8a13890eab0a1ede46
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):9ec92e92d0efca44e7ef022a61c49068
Current - Continuous Drain (Id) @ 25°C:83f488046a64ea460c68798431cb88d1
Rds On (Max) @ Id, Vgs:99797d08130789bc2371d2233e5d4537
Vgs(th) (Max) @ Id:575d6e82db7808eec7b34646e7555b28
Gate Charge (Qg) (Max) @ Vgs:3d8d7ec395b1f129e862414675487b5e
Input Capacitance (Ciss) (Max) @ Vds:2aae19bd6702df09327363e07ec2575e
Power - Max:c3495bb180ab9b6d6d48ebcdaa87f2e9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
Supplier Device Package:fe7cbfc5c8dc998814597054b009cbc7
In Stock: 2470
Stock:
2470 Can Ship Immediately
  • Делиться:
Для использования с
FDS6900AS
FDS6900AS
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
DMTH6016LSDQ-13
DMTH6016LSDQ-13
Diodes Incorporated
MOSFET 2 N-CHANNEL 60V 7.6A 8SO
PJT7802_R1_00001
PJT7802_R1_00001
Panjit International Inc.
20V N-CHANNEL ENHANCEMENT MODE M
FDMA1028NZ-F021
FDMA1028NZ-F021
onsemi
MOSFET 2N-CH 20V 3.7A MICROFET
NTTFD2D8N03P1E
NTTFD2D8N03P1E
onsemi
MOSFET N-CH 30V 12WQFN
VMM300-03F
VMM300-03F
IXYS
MOSFET 2N-CH 300V 290A Y3-DCB
STC5NF20V
STC5NF20V
STMicroelectronics
MOSFET 2N-CH 20V 5A 8-TSSOP
ZXMD63C02XTC
ZXMD63C02XTC
Diodes Incorporated
MOSFET N/P-CH 20V 8MSOP
VWM200-01P
VWM200-01P
IXYS
MOSFET 6N-CH 100V 210A V2
SIA513DJ-T1-GE3
SIA513DJ-T1-GE3
Vishay Siliconix
MOSFET N/P-CH 20V 4.5A SC70-6
IRLHS6376TR2PBF
IRLHS6376TR2PBF
Infineon Technologies
MOSFET 2N-CH 30V 3.6A PQFN
NTMFD4C86NT1G
NTMFD4C86NT1G
onsemi
MOSFET 2N-CH 30V 8DFN
Вас также может заинтересовать
P4SMAJ15A-AU_R1_000A1
P4SMAJ15A-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMCJ51AS_R1_00001
1.5SMCJ51AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
1.5SMCJ90CA_R1_00001
1.5SMCJ90CA_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5SMC24CA-AU_R1_000A1
1.5SMC24CA-AU_R1_000A1
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
1.5SMC8.2A_R1_00001
1.5SMC8.2A_R1_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
SVM1060X_R1_00001
SVM1060X_R1_00001
Panjit International Inc.
TO-277, SKY
PG5395_R2_00001
PG5395_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION PLASTI
QR406F_T0_00001
QR406F_T0_00001
Panjit International Inc.
PLANAR STRUCTURED SUPERFAST RECO
BZX84C6V8-AU_R1_000A1
BZX84C6V8-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-C51_R1_00001
BZT52-C51_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PJQ5411_R2_00001
PJQ5411_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
PJL9420_R2_00001
PJL9420_R2_00001
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M