PJP12NA60_T0_00001

PJP12NA60_T0_00001

Images are for reference only
See Product Specifications

PJP12NA60_T0_00001
Описание:
600V N-CHANNEL MOSFET
Упаковка:
Tape & Reel (TR)
Datasheet:
PJP12NA60_T0_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJP12NA60_T0_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:45a7caf307977e3e68e27161a8faf377
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:75f34b4ecd69db1ba7a8c3647bd85d95
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:adefe80c4a89824fe268dd1bd0082a35
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:b1c4f4b73ba4ad69e2b0ec487a7699d3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):6b960df09583e58e1e91f55d199f6233
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:9b3b590b14408ced9e56cc56696084a1
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HUF76107D3S
HUF76107D3S
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
STS11NF30L
STS11NF30L
STMicroelectronics
MOSFET N-CH 30V 11A 8SO
FDMS0343S
FDMS0343S
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR
DMN3024LK3-13
DMN3024LK3-13
Diodes Incorporated
MOSFET N-CH 30V 9.78A TO252-3
STW65N65DM2AG
STW65N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 60A TO247
PJD15P06A_L2_00001
PJD15P06A_L2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IPLK80R900P7ATMA1
IPLK80R900P7ATMA1
Infineon Technologies
MOSFET 800V TDSON-8
NTMS4706NR2G
NTMS4706NR2G
onsemi
MOSFET N-CH 30V 6.4A 8SOIC
TPC8032-H(TE12LQM)
TPC8032-H(TE12LQM)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 15A 8SOP
APT97N65LC6
APT97N65LC6
Microsemi Corporation
MOSFET N-CH 650V 97A TO264
RQ6E045TNTR
RQ6E045TNTR
Rohm Semiconductor
MOSFET N-CH 30V 4.5A TSMT6
RSQ035P03HZGTR
RSQ035P03HZGTR
Rohm Semiconductor
MOSFET P-CH 30V 3.5A TSMT6
Вас также может заинтересовать
P6SMBJ36A_R1_00001
P6SMBJ36A_R1_00001
Panjit International Inc.
SMB, TVS
5KP75CA_R2_00001
5KP75CA_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
1.5KE8.2CA_R2_00001
1.5KE8.2CA_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
SB3045FCT_T0_00001
SB3045FCT_T0_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIER
BR320F_R1_00001
BR320F_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
MBR2060YD_L2_00001
MBR2060YD_L2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
MER2DMA_R2_00601
MER2DMA_R2_00601
Panjit International Inc.
200V,SUPER FAST RECOVERY RECTIFI
UF300G_R2_00001
UF300G_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION ULTRAF
MBR560_R2_00001
MBR560_R2_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
SB1030_T0_00001
SB1030_T0_00001
Panjit International Inc.
SCHOTTKY BARRIER RECTIFIERS
MMSZ5229A_R1_00001
MMSZ5229A_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PJQ1916_R1_00201
PJQ1916_R1_00201
Panjit International Inc.
20V N-CHANNEL ENHANCEMENT MODE M