PJQ2463A_R1_00001

PJQ2463A_R1_00001

Images are for reference only
See Product Specifications

PJQ2463A_R1_00001
Описание:
60V P-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJQ2463A_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJQ2463A_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:ea939c6bd52e58d4b7db1f0cc7064480
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:560448dfe063900eed2e2f6707ecd493
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:9a935c8a1e91b57e9b3af740b54c1dd2
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:de16e6ac62e4ee8c6d34f7d0af046995
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:6a429c6dc18b4c01bff86ed38d1fceb8
Package / Case:5ca2465698459a103daf1ec0ae24ba5d
In Stock: 2990
Stock:
2990 Can Ship Immediately
  • Делиться:
Для использования с
IPB80N03S4L-03ATMA1
IPB80N03S4L-03ATMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
PJQ4408P_R2_00001
PJQ4408P_R2_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 2A CST3B
FQD12N20LTM
FQD12N20LTM
onsemi
MOSFET N-CH 200V 9A DPAK
IXFH12N100F
IXFH12N100F
IXYS
MOSFET N-CH 1000V 12A TO247AD
BUK9M52-40EX
BUK9M52-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 17.6A LFPAK33
SCTW40N120G2VAG
SCTW40N120G2VAG
STMicroelectronics
SICFET N-CH 1200V 33A HIP247
ZXMN3A01FQTA
ZXMN3A01FQTA
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
IAUC40N08S5L140ATMA1
IAUC40N08S5L140ATMA1
Infineon Technologies
MOSFET_(75V 120V( PG-TDSON-8
G75P04K
G75P04K
Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
SI1046R-T1-E3
SI1046R-T1-E3
Vishay Siliconix
MOSFET N-CH 20V SC75A
IXFK21N100F
IXFK21N100F
IXYS
MOSFET N-CH 1000V 21A TO264
Вас также может заинтересовать
PJSD15_R1_00001
PJSD15_R1_00001
Panjit International Inc.
400W LOW CLAMPING VOLTAGE SINGLE
P6SMBJ8.5AS_R1_00001
P6SMBJ8.5AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
1.5KE110AS_AY_00001
1.5KE110AS_AY_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
MBR16200DC_R2_00001
MBR16200DC_R2_00001
Panjit International Inc.
D PAK SURFACE SCHOTTKY BARRIER R
SB1020FCT_T0_00001
SB1020FCT_T0_00001
Panjit International Inc.
ISOLATION SCHOTTKY BARRIER RECTI
ERT2EAFC_R1_00001
ERT2EAFC_R1_00001
Panjit International Inc.
SURFACE MOUNT SUPER FAST RECOVER
ERT2DAFC_R1_00001
ERT2DAFC_R1_00001
Panjit International Inc.
SMAF-C, SUPER
1SMA4743-AU_R1_000A1
1SMA4743-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
MMBTA44_R1_00001
MMBTA44_R1_00001
Panjit International Inc.
TRANS NPN 400V 0.3A SOT23
MMBTA92_R1_00001
MMBTA92_R1_00001
Panjit International Inc.
TRANS PNP 300V 0.5A SOT23
PJL9403_R2_00001
PJL9403_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
PJP9NA90_T0_00001
PJP9NA90_T0_00001
Panjit International Inc.
900V N-CHANNEL MOSFET