PJQ4464AP_R2_00001

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Mfr. #:

PJQ4464AP_R2_00001

Mfr.:

Panjit International Inc.

Описание:

60V N-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJQ4464AP_R2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJQ4464AP_R2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	576c3604a8bb72b7f52110fad80ad9fb
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	e787bd1b742437cc57a7335aca9a0d2e
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	8c0562c9545d380d7638fed9443ae9df
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	7c04afc359d993fa0c6def2a7e693758
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	895e117d1f4fcb0355834e3f1cbac710
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	1ed2412fd9fde5296a64c275c290b727
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9