2SK3309(TE24L,Q)

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See Product Specifications

Mfr. #:

2SK3309(TE24L,Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 450V 10A TO220SM

Упаковка:

Tape & Reel (TR)

Datasheet:

2SK3309(TE24L,Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK3309(TE24L,Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	22b306863526200c7594190913dbf221
Current - Continuous Drain (Id) @ 25°C:	52494cba539840e9393c9095a1421004
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	39dafaa86575c63660aeeffd855c7f03
Vgs(th) (Max) @ Id:	a8d999915b067e20670485e9908f378a
Gate Charge (Qg) (Max) @ Vgs:	972213b4ff98b73fb67879667322f035
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	b0f3a24644a472efd7d412845a9c431f
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9a89cc95043fae4e2135b24e293ac5c9
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	c3c9f787be34dc1ee9e22c730142772b
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95