PJS6413_S1_00001

PJS6413_S1_00001

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PJS6413_S1_00001
Описание:
20V P-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJS6413_S1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJS6413_S1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:888ff2438a87b499f825ae4bda9820bc
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:439423083c09526eef60d8ee3e19c433
Vgs(th) (Max) @ Id:b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:9c776809f0ec6511de1829648c094927
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:c15325bbac4bb3715b67515c5aea3374
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:14a527b758f8993d661e4eaaccd26a36
Package / Case:14a527b758f8993d661e4eaaccd26a36
In Stock: 2900
Stock:
2900 Can Ship Immediately
  • Делиться:
Для использования с
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