PJS6415AE_S1_00001

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Mfr. #:

PJS6415AE_S1_00001

Mfr.:

Panjit International Inc.

Описание:

20V P-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJS6415AE_S1_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJS6415AE_S1_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	1f1fbcd794dcc92f91dcdda4b1d669ad
Drive Voltage (Max Rds On, Min Rds On):	d2e44972f573dbb9bc783edf82f45e5b
Rds On (Max) @ Id, Vgs:	ff428ef40f79f9852a9642b15f01c08c
Vgs(th) (Max) @ Id:	b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:	7a3a518cab03bd94fd4df91d14d076fd
Vgs (Max):	ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:	4491a6e55dcaa8da1669a01d20214d0b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	14a527b758f8993d661e4eaaccd26a36
Package / Case:	14a527b758f8993d661e4eaaccd26a36