PJS6417_S1_00001

Images are for reference only
See Product Specifications

Mfr. #:

PJS6417_S1_00001

Mfr.:

Panjit International Inc.

Описание:

20V P-CHANNEL ENHANCEMENT MODE M

Упаковка:

Tape & Reel (TR)

Datasheet:

PJS6417_S1_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJS6417_S1_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	a92e0d1c6035f7c982fd464523f98b40
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	5a335980161b9eba80377d4d4711bcaf
Vgs(th) (Max) @ Id:	97851845d1794c1701252b6a9d63f32b
Gate Charge (Qg) (Max) @ Vgs:	77340ed8fa5db4a3f849f8f1276c068e
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	4210017f095f288ea84ebb84aa2e27ea
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	14a527b758f8993d661e4eaaccd26a36
Package / Case:	14a527b758f8993d661e4eaaccd26a36