PJS6601_S2_00001

PJS6601_S2_00001

Images are for reference only
See Product Specifications

PJS6601_S2_00001
Описание:
20V COMPLEMENTARY ENHANCEMENT MO
Упаковка:
Tape & Reel (TR)
Datasheet:
PJS6601_S2_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJS6601_S2_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:ea3650709c99cb8a13890eab0a1ede46
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):c828a77388b77eed02df2bdc48ce88f8
Current - Continuous Drain (Id) @ 25°C:9b5adfb441d47b1778da733225d2eeb7
Rds On (Max) @ Id, Vgs:235269c6a9cea844d8140baa85c2f9b2
Vgs(th) (Max) @ Id:b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:0250f9e894ef924c77e19eca7c36a1b1
Input Capacitance (Ciss) (Max) @ Vds:f112a554efd241bacb1d461cd27a5b7a
Power - Max:6ceb14a6a136f3b1b5228f4ed05f6683
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:14a527b758f8993d661e4eaaccd26a36
Supplier Device Package:14a527b758f8993d661e4eaaccd26a36
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
MCH6631-TL-E-SY
MCH6631-TL-E-SY
Sanyo
N CHANNEL AND P CHANNEL SILICON
FDMS3606AS
FDMS3606AS
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
SQ9945BEY-T1_GE3
SQ9945BEY-T1_GE3
Vishay Siliconix
MOSFET 2N-CH 60V 5.4A
CSD87334Q3DT
CSD87334Q3DT
Texas Instruments
MOSFET 2N-CH 30V 20A 8SON
DMN53D0LDWQ-7
DMN53D0LDWQ-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
CSD87334Q3D
CSD87334Q3D
Texas Instruments
MOSFET 2N-CH 30V 20A 8SON
SI5904DC-T1-GE3
SI5904DC-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 20V 3.1A 1206-8
BSO203PHXUMA1
BSO203PHXUMA1
Infineon Technologies
MOSFET 2P-CH 20V 7A 8DSO
AUIRF7304QTR
AUIRF7304QTR
Infineon Technologies
MOSFET 2P-CH 20V 4A 8SOIC
VEC2616-TL-W
VEC2616-TL-W
onsemi
MOSFET N/P-CH 60V 3A/2.5A VEC8
IRF7904TRPBF-1
IRF7904TRPBF-1
Infineon Technologies
MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
DF23MR12W1M1B67BPSA1
DF23MR12W1M1B67BPSA1
Infineon Technologies
LOW POWER EASY
Вас также может заинтересовать
P4SMAJ18CA_R1_00001
P4SMAJ18CA_R1_00001
Panjit International Inc.
SMA, TVS
P6SMB16AS_R1_00001
P6SMB16AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
1.5SMCJ110AS_R1_00001
1.5SMCJ110AS_R1_00001
Panjit International Inc.
TRANSIENT VOLTAGE SUPPRESSOR
P4KE12AS_AY_00001
P4KE12AS_AY_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMA47A_R1_00001
P4SMA47A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
P4SMA100A_R1_00001
P4SMA100A_R1_00001
Panjit International Inc.
SURFACE MOUNT TRANSIENT VOLTAGE
1.5KE56CAS_AY_00001
1.5KE56CAS_AY_00001
Panjit International Inc.
TVS 1500W 56V BIDIR DO-201AE
BAT54ADW_R1_00001
BAT54ADW_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY DIODE ARR
MB26_R1_00001
MB26_R1_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
SD820YS_L2_00001
SD820YS_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
BZT52-C6V2S-AU_R1_000A1
BZT52-C6V2S-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B4V7-AU_R1_000A1
BZX84B4V7-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD