PJW1NA60B_R2_00001

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Mfr. #:

PJW1NA60B_R2_00001

Mfr.:

Panjit International Inc.

Описание:

600V N-CHANNEL MOSFET

Упаковка:

Tape & Reel (TR)

Datasheet:

PJW1NA60B_R2_00001 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	PJW1NA60B_R2_00001
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Panjit International Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	bec602d330d6548fc96de7a2375f75b6
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	a217ea393a1d813561f074a9525ed06e
Vgs(th) (Max) @ Id:	54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:	8ba572bf543f006113f198a5b03c8d9e
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	240380a4d4aa2196156fb7317dbae091
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	13e1be37351270e838c3d980e1ef7906
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	560b42d335ed49abb01a005a967a12be
Package / Case:	6dc6563daf7a3377ce355c876bce0c9b