Logo Logo
0
Мой запрос предложений
English


QR806_T0_00001

QR806_T0_00001

Images are for reference only
See Product Specifications

QR806_T0_00001
Mfr.:
Описание:
PLANAR STRUCTURED SUPERFAST RECO
Упаковка:
Tube
Datasheet:
QR806_T0_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:QR806_T0_00001
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Panjit International Inc.
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):aef4533582e3b78f1bc369aaf4ae62ba
Voltage - Forward (Vf) (Max) @ If:9482523bcb91f9082c2a177278eb3ef8
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):085935479c57c52499370412c48e3d38
Current - Reverse Leakage @ Vr:72b4176b05723fce26d1e3c7b53a6320
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:8fc8607d1eb9d0c756392186b450f26c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
1SS367,H3F
1SS367,H3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 10V 100MA SC76
UF4002 TR
UF4002 TR
Central Semiconductor Corp
DIODE GEN PURP 100V 1A DO41
S12MCH
S12MCH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 12A DO214AB
UH4PBCHM3_A/I
UH4PBCHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 2A TO277A
R32100
R32100
Microchip Technology
STD RECTIFIER
1N2429
1N2429
Microchip Technology
STD RECTIFIER
12TQ035STRL
12TQ035STRL
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 15A D2PAK
8ETH03S
8ETH03S
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 8A D2PAK
BAT 64-02W E6327
BAT 64-02W E6327
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SCD80-2
DSE010-TR-E
DSE010-TR-E
onsemi
DIODE GEN PURP 80V 100MA
IDH16G65C5XKSA1
IDH16G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO220-2
EP05Q06
EP05Q06
KYOCERA AVX
DIODE SCHOTTKY 60V 0.5A SOD-123
Вас также может заинтересовать
PJSD12W-AU_R1_000A1
PJSD12W-AU_R1_000A1
Panjit International Inc.
SINGLE LINE TVS DIODE FOR ESD PR
P4KE120C_R2_00001
P4KE120C_R2_00001
Panjit International Inc.
GLASS PASSIVATED JUNCTION TRANSI
GS1GDWG_R1_00001
GS1GDWG_R1_00001
Panjit International Inc.
SURFACE MOUNT GENERAL PURPOSE RE
UF504IG_AY_00001
UF504IG_AY_00001
Panjit International Inc.
ULTRA FAST RECOVERY RECTIFIERS
SBA120AS-AU_R1_000A1
SBA120AS-AU_R1_000A1
Panjit International Inc.
SOD-123, SKY
BZT52-B2V4S_R1_00001
BZT52-B2V4S_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZT52-B30_R1_00001
BZT52-B30_R1_00001
Panjit International Inc.
SOD-123, ZENER
BZT52-B11_R1_00001
BZT52-B11_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
MMBZ5247BV_R1_00001
MMBZ5247BV_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PZS5222BCH_R1_00001
PZS5222BCH_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PJS6413_S1_00001
PJS6413_S1_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
PJD4NA65H_L2_00001
PJD4NA65H_L2_00001
Panjit International Inc.
650V N-CHANNEL MOSFET