P1H06300D8

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Mfr. #:

P1H06300D8

Mfr.:

PN Junction Semiconductor

Описание:

GANFET N-CH 650V 10A DFN 8X8

Упаковка:

Tape & Reel (TR)

Datasheet:

P1H06300D8 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	P1H06300D8
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	PN Junction Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	35eb69956e740ed144b8581a71bf6973
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	600f6857f966a3ecb5ca3022150669c1
Drive Voltage (Max Rds On, Min Rds On):	d58bb95aef80a9b06259c05a8650ba50
Rds On (Max) @ Id, Vgs:	4ec6ff628993e2a4dedb39d5d1a1d27b
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	3d68817387401c8c3afcd7aed834d5ed
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	7264d418b4d66e84abe1cd23ebcd84fd
Package / Case:	336d5ebc5436534e61d16e63ddfca327

In Stock: 0

Stock:

0 Can Ship Immediately