P3D06004G2

P3D06004G2

Images are for reference only
See Product Specifications

P3D06004G2
Описание:
DIODE SCHOTTKY 600V 4A TO263-2
Упаковка:
Tape & Reel (TR)
Datasheet:
P3D06004G2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:P3D06004G2
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:PN Junction Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):fadd4fa8aca56c767db7f6b1611e43a2
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:6f01706eeebd8febc4a2214f135785aa
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:81587f49224d84530b4261da8cca5c6f
Supplier Device Package:81587f49224d84530b4261da8cca5c6f
Operating Temperature - Junction:57d4d9eedc2deb0e981150db4dec7a0a
In Stock: 200
Stock:
200 Can Ship Immediately
  • Делиться:
Для использования с
BAV21-TAP
BAV21-TAP
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA DO35
CDBURT0530LL-HF
CDBURT0530LL-HF
Comchip Technology
DIODE SCHOTTKY 20V 500MA 0603
PCDP1265G1_T0_00001
PCDP1265G1_T0_00001
Panjit International Inc.
TO-220AC, SIC
BAS21/8R
BAS21/8R
Nexperia USA Inc.
BAS21 - HIGH VOLTAGE SWITCHING D
EU02V0
EU02V0
Sanken
DIODE GEN PURP 400V 1A AXIAL
V8PM45-M3/I
V8PM45-M3/I
Vishay General Semiconductor - Diodes Division
RECTIFIER BARRIER SCHOTTKY TO-27
DL4002-13
DL4002-13
Diodes Incorporated
DIODE GEN PURP 100V 1A MELF
SIDC02D60F6X1SA1
SIDC02D60F6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 3A WAFER
BA157GPHE3/73
BA157GPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
TSSA5U60 M2G
TSSA5U60 M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AC
6A10GHB0G
6A10GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
FS1DE-TP
FS1DE-TP
Micro Commercial Co
DIODE GEN PURP 200V 1A SMAE
Вас также может заинтересовать
P3D06008F2
P3D06008F2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 8A TO220F-2
P3D06006E2
P3D06006E2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 6A TO252-2
P3D12015K2
P3D12015K2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 15A TO247-2
P3D06010G2
P3D06010G2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 10A TO263-2
P3D12010K3
P3D12010K3
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 10A TO247-3
P3D06016GS
P3D06016GS
PN Junction Semiconductor
DIODE SCHOTTKY 600V 16A TO263S
P3M171K0T3
P3M171K0T3
PN Junction Semiconductor
SICFET N-CH 1700V 6A TO-220-3
P3M173K0K3
P3M173K0K3
PN Junction Semiconductor
SICFET N-CH 1700V 4A TO-247-3
P3M06040K3
P3M06040K3
PN Junction Semiconductor
SICFET N-CH 650V 68A TO247-3
P3M06300K3
P3M06300K3
PN Junction Semiconductor
SICFET N-CH 650V 9A TO-247-3
P3M171K0F3
P3M171K0F3
PN Junction Semiconductor
SICFET N-CH 1700V 5.5A TO-220F-3
P3M12040K3
P3M12040K3
PN Junction Semiconductor
SICFET N-CH 1200V 63A TO-247-3