P3D06010E2

P3D06010E2

Images are for reference only
See Product Specifications

P3D06010E2
Описание:
DIODE SCHOTTKY 600V 10A TO252-2
Упаковка:
Tape & Reel (TR)
Datasheet:
P3D06010E2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:P3D06010E2
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:PN Junction Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):347f255197950e6b02089b73b6a8acdd
Current - Average Rectified (Io):c6e4de9d2f44291ab2de2d18e07fd454
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:220299ce316d00109dc1185a70ba9a00
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:9aff204699608b98648f08ba0034c0fb
Supplier Device Package:9aff204699608b98648f08ba0034c0fb
Operating Temperature - Junction:57d4d9eedc2deb0e981150db4dec7a0a
In Stock: 500
Stock:
500 Can Ship Immediately
  • Делиться:
Для использования с
RL1N1200F
RL1N1200F
Rectron USA
DIODE GEN PURP 1200V 1A A405
ME03EA03
ME03EA03
KYOCERA AVX
DIODE SCHOTTKY 30V 3A SOD-128
S4G
S4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO214AB
CDBB560-G
CDBB560-G
Comchip Technology
DIODE SCHOTTKY 60V 5A DO214AA
AP01CWK
AP01CWK
Sanken
DIODE GEN PURP 1KV 200MA AXIAL
SD125SC150B.T1
SD125SC150B.T1
SMC Diode Solutions
PIV 150V IO 15A CHIP SIZE 125MIL
ES3G-F1-0000HF
ES3G-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 3A DO214AB
VS-8ETH06PBF
VS-8ETH06PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO220AC
1N5402-TP
1N5402-TP
Micro Commercial Co
DIODE GEN PURP 200V 3A DO201AD
CRSH2-4 TR
CRSH2-4 TR
Central Semiconductor Corp
DIODE SCHOTTKY DO15
SR004 B0G
SR004 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 500MA DO204AL
CRG09(TE85L,Q,M)
CRG09(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE GEN PURP 400V 1A S-FLAT
Вас также может заинтересовать
P3D06002T2
P3D06002T2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 2A TO220-2
P3D06004E2
P3D06004E2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 4A TO252-2
P6D12002E2
P6D12002E2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 2A TO252-2
P3D06010E2
P3D06010E2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 10A TO252-2
P3D06016GS
P3D06016GS
PN Junction Semiconductor
DIODE SCHOTTKY 600V 16A TO263S
P3D12040K3
P3D12040K3
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 40A TO247-3
P3M06060T3
P3M06060T3
PN Junction Semiconductor
SICFET N-CH 650V 46A TO220-3
P3M12025K4
P3M12025K4
PN Junction Semiconductor
SICFET N-CH 1200V 112A TO-247-4
P3M173K0F3
P3M173K0F3
PN Junction Semiconductor
SICFET N-CH 1700V 1.97A TO-220F-
P3M12040K4
P3M12040K4
PN Junction Semiconductor
SICFET N-CH 1200V 63A TO-247-3
P3M17040K3
P3M17040K3
PN Junction Semiconductor
SICFET N-CH 1700V 73A TO-247-3
P3M12017K4
P3M12017K4
PN Junction Semiconductor
SICFET N-CH 1200V 151A TO-247-4