P3D12010K2

P3D12010K2

Images are for reference only
See Product Specifications

P3D12010K2
Описание:
DIODE SCHOTTKY 1200V 10A TO247-2
Упаковка:
Tube
Datasheet:
P3D12010K2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:P3D12010K2
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:PN Junction Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):1d19ac806bb4169c4bb1c51b1989ee3a
Voltage - Forward (Vf) (Max) @ If:336d5ebc5436534e61d16e63ddfca327
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:ee55ccaef0b8c3b6f729b272caf383e8
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Package / Case:d2aad78b602e79a43955ea20f9b47d9e
Supplier Device Package:d2aad78b602e79a43955ea20f9b47d9e
Operating Temperature - Junction:57d4d9eedc2deb0e981150db4dec7a0a
In Stock: 300
Stock:
300 Can Ship Immediately
  • Делиться:
Для использования с
VS-10MQ040-M3/5AT
VS-10MQ040-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1.5A DO214AC
AR1PJ-M3/84A
AR1PJ-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 1A DO220AA
SS23MHRSG
SS23MHRSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A MICRO SMA
TSUP10M60SH S1G
TSUP10M60SH S1G
Taiwan Semiconductor Corporation
10A, 60V, SCHOTTKY RECTIFIER
1N4448W-HE3-18
1N4448W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD123
BAT43W-HE3-18
BAT43W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
BYG22AHM3_A/I
BYG22AHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 50V 2A DO214AC
SBRT10U60D1Q-13
SBRT10U60D1Q-13
Diodes Incorporated
DIODE SBR 60V 10A TO252
IDW40E65D1
IDW40E65D1
Infineon Technologies
IDW40E65 - SILICON POWER DIODE
SFF1003G C0G
SFF1003G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 10A ITO220AB
CRG04A,LQ(M
CRG04A,LQ(M
Toshiba Semiconductor and Storage
MOSFET N-CH
CTLSH1-40M563 TR
CTLSH1-40M563 TR
Central Semiconductor Corp
TRANSISTOR
Вас также может заинтересовать
P3D06008T2
P3D06008T2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 8A TO220-2
P3D06010T2
P3D06010T2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 10A TO220-2
P3D06010F2
P3D06010F2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 10A TO220F-2
P3D12015T2
P3D12015T2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 15A TO220-2
P3D12020GS
P3D12020GS
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 20A TO263S
P3D06008G2
P3D06008G2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 8A TO263-2
P3D06016GS
P3D06016GS
PN Junction Semiconductor
DIODE SCHOTTKY 600V 16A TO263S
P3M06120K4
P3M06120K4
PN Junction Semiconductor
SICFET N-CH 650V 27A TO-247-4
P3M06300K3
P3M06300K3
PN Junction Semiconductor
SICFET N-CH 650V 9A TO-247-3
P3M173K0F3
P3M173K0F3
PN Junction Semiconductor
SICFET N-CH 1700V 1.97A TO-220F-
P3M06120T3
P3M06120T3
PN Junction Semiconductor
SICFET N-CH 650V 29A TO-220-3
P3M07013K4
P3M07013K4
PN Junction Semiconductor
SICFET N-CH 750V 140A TO-247-4