P3M06120T3

Images are for reference only
See Product Specifications

Mfr. #:

P3M06120T3

Mfr.:

PN Junction Semiconductor

Описание:

SICFET N-CH 650V 29A TO-220-3

Упаковка:

Tube

Datasheet:

P3M06120T3 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	P3M06120T3
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	PN Junction Semiconductor
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	f37f6cfec23b9f0e14c0255baff008e1
Drive Voltage (Max Rds On, Min Rds On):	c848c43fe07598760b6ae77bbaac9f40
Rds On (Max) @ Id, Vgs:	a1903b84164b141e5e0e8ce5829cf129
Vgs(th) (Max) @ Id:	f9aa3d1c8922a5a1d015b6227ed26e12
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	5e3e20f1fa851bece5e2d031ac0b6cb4
Input Capacitance (Ciss) (Max) @ Vds:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	609b95193ea29b014969b198c4b2ed30
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e1851cdfc751280f4e1d9019d3d3652d
Package / Case:	d292e75da6784e098598da0a8c4cc46b