P3M12080G7

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See Product Specifications

Mfr. #:

P3M12080G7

Mfr.:

PN Junction Semiconductor

Описание:

SICFET N-CH 1200V 32A TO-263-7

Упаковка:

Tape & Reel (TR)

Datasheet:

P3M12080G7 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	P3M12080G7
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	PN Junction Semiconductor
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):	edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:	f91e3f40898452c6c3fd772033d8a316
Drive Voltage (Max Rds On, Min Rds On):	c848c43fe07598760b6ae77bbaac9f40
Rds On (Max) @ Id, Vgs:	53065ca12aeb870e8357f710e1fccc05
Vgs(th) (Max) @ Id:	967235d16d20ff330fa90702ef5968dd
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	eb94f286d6e649d243aa3d1214c058aa
Input Capacitance (Ciss) (Max) @ Vds:	336d5ebc5436534e61d16e63ddfca327
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b2c8a1ef7d4762aa66576fce81104c8f
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	ddc47a001e8913f0f8d1fa9d297fdf36
Package / Case:	f0141ac7a209283a1eeaae764566c410

In Stock: 0

Stock:

0 Can Ship Immediately