RMD1N25ES9

RMD1N25ES9

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RMD1N25ES9
Mfr.:
Описание:
MOSFET N-CHANNEL 25V 1.1A SOT363
Упаковка:
Tape & Reel (TR)
Datasheet:
RMD1N25ES9 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RMD1N25ES9
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Rectron USA
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):622fb57dec9cae5648afabcd559f8856
Current - Continuous Drain (Id) @ 25°C:d3a71c41b40fb91020ded6c11f992482
Drive Voltage (Max Rds On, Min Rds On):ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:21db66dadba9369e4191bc0ff7987e31
Vgs(th) (Max) @ Id:a209081fc9e80668dd6ffb499d3c9fcb
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:cf56da6b4a236f48ba2683c5c2c25189
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):6f587185e76d78966d0d4c0f97729b12
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:4463c244d9f578454f0eb7890a786f91
Package / Case:4292fad3e2346c8afd373cfd6137b6e7
In Stock: 0
Stock:
0 Can Ship Immediately
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