2SJ358C-T1-AZ

2SJ358C-T1-AZ

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2SJ358C-T1-AZ
Mfr.:
Описание:
2SJ358C-T1-AZ - P-CHANNEL MOS FE
Упаковка:
Bulk
Datasheet:
2SJ358C-T1-AZ Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2SJ358C-T1-AZ
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:dfffc8d8bbbbbc6d50d049496725fad9
Drive Voltage (Max Rds On, Min Rds On):f74f85d709bcbb2da5806f0ce2ab05c0
Rds On (Max) @ Id, Vgs:61cb1749e45dd058619ce29a0ff58c66
Vgs(th) (Max) @ Id:a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:db83709cc1aa640e30cdddd177064057
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e89a1c060cd203df800e32ac4a86ef30
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:489bbe64bbf923a8f9b615dd04a9644c
Package / Case:80047cf912aa748ae51ce6180b581cf9
In Stock: 15000
Stock:
15000 Can Ship Immediately
  • Делиться:
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