2SK1859-E

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See Product Specifications

Mfr. #:

2SK1859-E

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 900V 6A TO3P

Упаковка:

Tube

Datasheet:

2SK1859-E Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2SK1859-E
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:	c8334ef5d2640f5ce1f0e830c938d440
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	ad308ccfa125344d598f5de14615c1bb
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	7f24aad6e32513326a43db746386d71b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4d11c3d72a44f4227b1e9af62cf6d238
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	dc62bb2234bdbf5b418010bea6cac21b
Package / Case:	a02e0d1a928de3366340ceae094aecd8