H5N2007LSTL-E

H5N2007LSTL-E

Images are for reference only
See Product Specifications

H5N2007LSTL-E
Описание:
25A, 200V, 0.047OHM, N CHANNEL M
Упаковка:
Bulk
Datasheet:
H5N2007LSTL-E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:H5N2007LSTL-E
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Renesas Electronics America Inc
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:a826da1b620026887a35a277f9c24187
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 23000
Stock:
23000 Can Ship Immediately
  • Делиться:
Для использования с
TK210V65Z,LQ
TK210V65Z,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 15A 5DFN
SI3460BDV-T1-BE3
SI3460BDV-T1-BE3
Vishay Siliconix
N-CHANNEL 20-V (D-S) MOSFET
SIHH240N60E-T1-GE3
SIHH240N60E-T1-GE3
Vishay Siliconix
MOSFET N-CH 600V 12A PPAK 8 X 8
TPW1R104PB,L1XHQ
TPW1R104PB,L1XHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 120A 8DSOP
STP4NK60ZFP
STP4NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 4A TO220FP
DMNH6012SPS-13
DMNH6012SPS-13
Diodes Incorporated
MOSFET N-CH 60V 50A PWRDI5060-8
NTD50N03R-35G
NTD50N03R-35G
onsemi
MOSFET N-CH 25V 7.8A/45A IPAK
SI1012R-T1-E3
SI1012R-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 500MA SC75A
TPC8111(TE12L,Q,M)
TPC8111(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 11A 8SOP
NTD4815NHT4G
NTD4815NHT4G
onsemi
MOSFET N-CH 30V 6.9A/35A DPAK
TK50E06K3(S1SS-Q)
TK50E06K3(S1SS-Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 50A TO220-3
FDD9411L-F085
FDD9411L-F085
onsemi
MOSFET N-CH 40V 25A TO252
Вас также может заинтересовать
XLP73V880.000000I
XLP73V880.000000I
Renesas Electronics America Inc
XTAL OSC VCXO 880.0000MHZ LVPECL
HVL358CMKRF-E
HVL358CMKRF-E
Renesas Electronics America Inc
VARIABLE CAPACITANCE DIODE
9LRS3165BGLF
9LRS3165BGLF
Renesas Electronics America Inc
IC PC MAIN CLOCK 64TSSOP
8N3SV75FC-0063CDI
8N3SV75FC-0063CDI
Renesas Electronics America Inc
IC OSC VCXO 24MHZ 6-CLCC
X9319WS8IZT1
X9319WS8IZT1
Renesas Electronics America Inc
IC DGTL POT 10KOHM 100TAP 8SOIC
R7FA2L1A93CNE#AA0
R7FA2L1A93CNE#AA0
Renesas Electronics America Inc
MCU RA2L1 ARM CM23 48MHZ 128K QF
UPD78F8029GAA-C08-GAM-C-G
UPD78F8029GAA-C08-GAM-C-G
Renesas Electronics America Inc
IC MCU
UPD70F3839K8-5B4-SSA-AX
UPD70F3839K8-5B4-SSA-AX
Renesas Electronics America Inc
IC MICROCONTROLLER
R5S72625X144FP#UZ
R5S72625X144FP#UZ
Renesas Electronics America Inc
IC MCU
IDT70825L20G
IDT70825L20G
Renesas Electronics America Inc
IC RAM 128KBIT PARALLEL 84PGA
IDT71V67602S150PF8
IDT71V67602S150PF8
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 100TQFP
X40420S14I-BT1
X40420S14I-BT1
Renesas Electronics America Inc
IC SUPERVISOR 2 CHANNEL 14SOIC