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номер части: | NESG3031M14-T3-A |
Категория: | Discrete Semiconductor Products |
Подкатегория: | Transistors - Bipolar (BJT) - RF |
Производитель: | Renesas Electronics America Inc |
Упаковка: | Bulk |
Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
Voltage - Collector Emitter Breakdown (Max): | f725709ace4fc588ef4fbb5fdc8cdc5c |
Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
Noise Figure (dB Typ @ f): | b7a70901a09b30767499cb265961916b |
Gain: | b26e64a8dbb779f9b0f38793f49c8948 |
Power - Max: | 20ab0682f42cf6c80baac614e57e0f0d |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15b655dc23ec4fec2fbea068ddce23b0 |
Current - Collector (Ic) (Max): | 63fc4c7aa1c5a40077fccc0c1e9c768c |
Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
Package / Case: | 27b70114461af3d343ecfb39fcdc920d |
Supplier Device Package: | 6ad8dc26a39dcc89bb4830768ed685e3 |