UPA2820T1S-E2-AT

Images are for reference only
See Product Specifications

Mfr. #:

UPA2820T1S-E2-AT

Mfr.:

Renesas Electronics America Inc

Описание:

MOSFET N-CH 30V 8HVSON

Упаковка:

Tape & Reel (TR)

Datasheet:

UPA2820T1S-E2-AT Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	UPA2820T1S-E2-AT
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Renesas Electronics America Inc
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	1665d0f324392ab2468aa154d47dcb98
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	e92b328c8fc847121ecb7a09854289a5
Vgs(th) (Max) @ Id:	336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:	9e541cbc895757398ae8d0144a8ced7d
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	be83803cb83bb2d74cec7e92257dd579
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	a63b329f9f51ed08209bb51c24f049ae
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	c0109577310599c6822d3831b1178558
Package / Case:	369f3769eeeca8edfced5aeea243bc44