BSM600C12P3G201

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Mfr. #:

BSM600C12P3G201

Mfr.:

Rohm Semiconductor

Описание:

SICFET N-CH 1200V 600A MODULE

Упаковка:

Tray

Datasheet:

BSM600C12P3G201 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BSM600C12P3G201
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Rohm Semiconductor
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):	edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:	50bcade9a21c43e4829e7ec34f414b2b
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:	d599fccbf3536bba787557d36a6168a9
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	8d18353f9f4f784330e8d0c861765f6b
Input Capacitance (Ciss) (Max) @ Vds:	cbed4ddfe5e161b1abf2933b639f7c12
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	53dcdf2cf080296eb671667e08b7f3c5
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:	e55f75a29310d7b60f7ac1d390c8ae42
Package / Case:	e55f75a29310d7b60f7ac1d390c8ae42

In Stock: 0

Stock:

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