TSM048NB06LCR RLG

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Mfr. #:

TSM048NB06LCR RLG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 60V 16A/107A 8PDFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM048NB06LCR RLG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM048NB06LCR RLG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	a2fa94a7d2551d05d054edeb90587d36
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	b4f7a94959bbf17d643d0d610738d489
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	3a4a7dc7b45d7318558d72a40a6dd8b8
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3e1860eae7aa373cca8c56189279eb28
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	15afe50b968b64b0f87b2f0b95f32747
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	85804fba97d67c7de29f828b662181f9
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b

In Stock: 0

Stock:

0 Can Ship Immediately