RV8C010UNHZGG2CR

RV8C010UNHZGG2CR

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RV8C010UNHZGG2CR
Описание:
MOSFET N-CH 20V 1A DFN1010-3W
Упаковка:
Tape & Reel (TR)
Datasheet:
RV8C010UNHZGG2CR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RV8C010UNHZGG2CR
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Rohm Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:45a48804a6be1a50f1da045aa07cbd8c
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:79c156b234fe4ba9e24171fb91794eef
Vgs(th) (Max) @ Id:255bbeac52b52c6c3dc550097e1d43fd
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:0f7801aa92cab7233556d266081446fd
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):6a0a215cc8b7cad4343d58bff081a04a
Operating Temperature:a05f788eae82918882d3b91ce435570b
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:b895329cb952fe80f85ab6a8cc7a2dfd
Package / Case:fd0564f405b2eae0543f45927c1efab9
In Stock: 5970
Stock:
5970 Can Ship Immediately
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