TK090N65Z,S1F

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Mfr. #:

TK090N65Z,S1F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 650V 30A TO247

Упаковка:

Tube

Datasheet:

TK090N65Z,S1F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK090N65Z,S1F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	0563dec0a7488306d232b9f76bb0fb19
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	0c770366489ff9f5d626edd619ef137e
Vgs(th) (Max) @ Id:	6c8d1d3c27f544e2665c67794c6f32b5
Gate Charge (Qg) (Max) @ Vgs:	4dd049517aeb42316ab625bd041bdb73
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	864c4bf30dd6015396d62c5ee0dd822e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	eedcf883fa5cf18823fd32a2edeed98b
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	566bc0f44c33782e0104763798b071ab
Package / Case:	748a8539a6c3c7dbdb455218c72fac40