TW070J120B,S1Q

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Mfr. #:

TW070J120B,S1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

SICFET N-CH 1200V 36A TO3P

Упаковка:

Tube

Datasheet:

TW070J120B,S1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TW070J120B,S1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):	edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:	dee018c5d7cc2ec69b4278e384f4f190
Drive Voltage (Max Rds On, Min Rds On):	c828a77388b77eed02df2bdc48ce88f8
Rds On (Max) @ Id, Vgs:	f3717cf8a52fb8c6036698f1a7d563e7
Vgs(th) (Max) @ Id:	d2e7a2b7463ac6666799091e6863a926
Gate Charge (Qg) (Max) @ Vgs:	a8f275f26d29ca26b2f7e7a9ce2a47c9
Vgs (Max):	ec329bd647d34f7eda87500c6e83ccc3
Input Capacitance (Ciss) (Max) @ Vds:	47723f584acb48ead86d3e48e1cb2a76
FET Feature:	eb6d8ae6f20283755b339c0dc273988b
Power Dissipation (Max):	47a3aad8cb4d14c5fbb8ccfa425e8477
Operating Temperature:	8fc8607d1eb9d0c756392186b450f26c
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	802becb26be6cafacf181bb527af5311
Package / Case:	a37ad9863329afbf5b7bab5645143153