1N5822 A0G

1N5822 A0G

Images are for reference only
See Product Specifications

1N5822 A0G
Описание:
DIODE SCHOTTKY 40V 3A DO201AD
Упаковка:
Tape & Box (TB)
Datasheet:
1N5822 A0G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N5822 A0G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Box (TB)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):628cbc3e45d5bacb32414a526acf56ef
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:9ceaca27ca66634c7b99737a17a51459
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:a9ea43c10c97fa0def23894edeb07f7e
Capacitance @ Vr, F:8325f87f915aaca1cd64072c93114063
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:3e6133272744ddc764059b0c9b6e5360
Supplier Device Package:770ae6406206d7dd099f2c38b75ee7c7
Operating Temperature - Junction:b2db944416af296787012d8a4bee58d3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
ES1PB-M3/84A
ES1PB-M3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO220AA
MBR750
MBR750
onsemi
DIODE SCHOTTKY 50V 7.5A TO220AC
P3D06004T2
P3D06004T2
PN Junction Semiconductor
DIODE SCHOTTKY 600V 4A TO220-2
SB190-T
SB190-T
Diodes Incorporated
DIODE SCHOTTKY 90V 1A DO41
SE20DDHM3/I
SE20DDHM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3.9A TO263AC
SFF1008G
SFF1008G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A ITO220AB
PMEG3005EGW,118
PMEG3005EGW,118
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY, 30V
UG1005-T
UG1005-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
RGP30BL-E3/72
RGP30BL-E3/72
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A DO201AD
3A100 B0G
3A100 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO204AC
RL2A
RL2A
Sanken
DIODE GEN PURPOSE
SFT17G
SFT17G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 500V TS-1
Вас также может заинтересовать
1KSMB10CAHM4G
1KSMB10CAHM4G
Taiwan Semiconductor Corporation
TVS DIODE 8.55VWM 14.5VC DO214AA
SMBJ64A R5G
SMBJ64A R5G
Taiwan Semiconductor Corporation
TVS DIODE 64VWM 103VC DO214AA
SMBJ33A R5G
SMBJ33A R5G
Taiwan Semiconductor Corporation
TVS DIODE 33VWM 53.3VC DO214AA
1V5KE36A
1V5KE36A
Taiwan Semiconductor Corporation
TVS DIODE 30.8VWM 49.9VC DO201AD
SA8.5AHR0G
SA8.5AHR0G
Taiwan Semiconductor Corporation
TVS DIODE 8.5VWM 14.4VC DO204AC
P4SMA160A R3G
P4SMA160A R3G
Taiwan Semiconductor Corporation
TVS DIODE 136VWM 219VC DO214AC
SMCJ28AHR7G
SMCJ28AHR7G
Taiwan Semiconductor Corporation
TVS DIODE 28VWM 45.4VC DO214AB
SMCJ17CA M6
SMCJ17CA M6
Taiwan Semiconductor Corporation
TVS DIODE 1500W DO214AB SMC
HER1008G
HER1008G
Taiwan Semiconductor Corporation
DIODE ARRAY GP 10A TO220AB
BZT52C6V2 RHG
BZT52C6V2 RHG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 500MW SOD123F
BZD27C82P M2G
BZD27C82P M2G
Taiwan Semiconductor Corporation
DIODE ZENER 82V 1W SUB SMA
TSM033NA03CR RLG
TSM033NA03CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 129A 8PDFN