6A100G

6A100G

Images are for reference only
See Product Specifications

6A100G
Описание:
DIODE GEN PURP 6A R-6
Упаковка:
Tape & Reel (TR)
Datasheet:
6A100G Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:6A100G
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Taiwan Semiconductor Corporation
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Average Rectified (Io):d0b1bfd50dd40176f497a2915a6e579b
Voltage - Forward (Vf) (Max) @ If:631b9b3969ef36ae90a18dc55be9f424
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:d6b00d64e7844edb2c9218eb85ed0891
Capacitance @ Vr, F:37bb8e09d217746b5f64d8b4508e5e8a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:1578c82b80eaab421cf70805f1d1fd60
Supplier Device Package:00516c841b6ca4ebb377c65f3f917e5f
Operating Temperature - Junction:c175279a77a6d2f4f996c08dd5d3786c
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
BAS34-TAP
BAS34-TAP
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 60V 200MA DO35
HS1MAL
HS1MAL
Taiwan Semiconductor Corporation
75NS, 1A, 1000V, HIGH EFFICIENT
1N5822US
1N5822US
Microchip Technology
DIODE SCHOTTKY 40V 3A B-MELF
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
HFM103W-W
HFM103W-W
Rectron USA
DIODE FAST RECOVERY 200V 1A
MBR8170TFSTBG
MBR8170TFSTBG
onsemi
170V 8A SCHOTTKY
A397D
A397D
Powerex Inc.
DIODE GEN PURP 400V 400A DO200AA
VS-SD1500C08L
VS-SD1500C08L
Vishay General Semiconductor - Diodes Division
DIODE GP 800V 1600A DO200AB
1N412RB
1N412RB
Solid State Inc.
DO8 100 AMP SILICON RECTIFIER
RGP30JHE3/54
RGP30JHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
SBYV26C-5001M3/73
SBYV26C-5001M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
RBQ30TB45BNZC9
RBQ30TB45BNZC9
Rohm Semiconductor
RBQ30TB45BNZ IS SCHOTTKY BARRIER
Вас также может заинтересовать
SMAJ51CHR3G
SMAJ51CHR3G
Taiwan Semiconductor Corporation
TVS DIODE 51VWM 91.1VC DO214AC
SMCJ78CA V7G
SMCJ78CA V7G
Taiwan Semiconductor Corporation
TVS DIODE 78VWM 126VC DO214AB
1.5KE22AH
1.5KE22AH
Taiwan Semiconductor Corporation
TVS DIODE 18.8VWM 30.6VC DO201
BZW04-14 R1G
BZW04-14 R1G
Taiwan Semiconductor Corporation
TVS DIODE 13.6VWM 22.5VC DO204AL
P6SMB100CAHR5G
P6SMB100CAHR5G
Taiwan Semiconductor Corporation
TVS DIODE 85.5VWM 137VC DO214AA
SMCJ26CAHR7G
SMCJ26CAHR7G
Taiwan Semiconductor Corporation
TVS DIODE 26VWM 42.1VC DO214AB
SMCJ90A R7G
SMCJ90A R7G
Taiwan Semiconductor Corporation
TVS DIODE 90VWM 146VC DO214AB
PGSMAJ36A F2G
PGSMAJ36A F2G
Taiwan Semiconductor Corporation
TVS DIODE 36VWM 58.1VC DO214AC
S1KL R3G
S1KL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A SUB SMA
HER201G R0G
HER201G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO204AC
ES3J M6G
ES3J M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
SF1603GHC0G
SF1603GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO220AB